A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique
non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully …

The predictive capability of existing physical descriptions of multi-state devices (eg, oxide
memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit …

Metal oxide memristors are highly desirable for bionic synaptic applications. Recently,
negative differential resistance (NDR) effects have been found in the resistance switching …

Mott memristor (MM)-based neuristors are promising candidates for artificial neuron
implementations due to their scalability, energy efficiency, and CMOS-compatibility. A …

Here we present a variation-aware design space analysis for threshold switch (TS) assisted
memristive memory. TS is augmented in series with the standard one-transistor one-resistor …

Herein, a 1D mathematical model of memristor resistive switching that includes a full
physical model of steady‐state heat and mass transfer is developed. The model considers …

With switching dynamics similar to synapses, resistive random access memories (RRAMs)
provide the solutions for brain-inspired computing. In this article, a compact model for a …

Resistive random access memory (RRAM) with edge-contacted graphene electrode has
much lower power consumption and excellent scalability as in other's previous studies …

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored
memory states in emerging memory systems. In this work, we present four novel sense …

By taking inspiration from the operation of biological brains, emerging brain-inspired
hardware has the potential to revolutionize the way computations are performed. Brain …