In this article, we will present recent advances in reliability effects such as electromigration
on interconnects and Negative/Positive Bias Temperature Instability (N/P BTI) effects on …

With the advancement of Moore's Law reaching its limits, advanced packaging technologies
represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and …

Electromigration (EM) becomes a major concern for VLSI circuits as the technology
advances in the nanometer regime. With Korhonen equations, EM assessment for VLSI …

Electromigration (EM) analysis for complicated interconnects requires the solving of partial
differential equations, which is expensive. In this paper, we propose a fast transient …

The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

For practical testing and detection of electromigration (EM) induced failures in dual
damascene copper interconnects, one critical issue is creating stressing conditions to …

In this work, we propose a novel physics-informed sparse regression (PISR) framework to
solve stress evolution (described by Korhonen's equations) in general multisegment wires …

In this paper, we propose a novel machine learning-based approach, called PostPInn-Em,
for solving the partial differential equations for stress evolution in a confined metal …

Electromigration (EM) becomes a major reliability concern in 3-D integrated circuits (3-D
ICs). To mitigate this problem, a typical solution is to use through-silicon via (TSV) …

新型工艺下芯片集成度的提高和尺寸的缩小导致了器件内部电场和电流密度的不断增加,
使得老化问题日趋严重, 当前针对老化主要的防护思路依然是采取保护带和预留时序裕量的方式 …