S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

YZ Yoo, ZW Jin, T Chikyow, T Fukumura… - Applied physics …, 2002 - pubs.aip.org
S-doped ZnO (ZnO: S) film was fabricated by supplying ZnS species from laser ablation of a
ZnS target during ZnO growth. Variations of lattice constants and band gaps with respect to …

Controllable synthesis of wurtzite ZnS nanorods through simple hydrothermal method in the presence of thioglycolic acid

M Salavati-Niasari, MR Loghman-Estarki… - Journal of Alloys and …, 2009 - Elsevier
Wurtzite ZnS nanorods were synthesized via a hydrothermal technique by adding
thioglycolic acid with zinc acetate as the precursor. The as-synthesized ZnS nanorods have …

Difference in optical bandgap between zinc-blende and wurtzite ZnO structure formed on sapphire (0001) substrate

GH Lee, T Kawazoe, M Ohtsu - Solid state communications, 2002 - Elsevier
Two photoluminescence peaks were observed from ZnO film formed by the oxidation of zinc
blende ZnS film on sapphire (0001) substrate. The emission peaks correspond to hexagonal …

Solubility limits and phase structures in epitaxial ZnOS alloy films grown by pulsed laser deposition

Y He, L Wang, L Zhang, M Li, X Shang, Y Fang… - Journal of alloys and …, 2012 - Elsevier
High-quality ZnO1− xSx thin films were grown epitaxially on c-plane sapphire substrates by
pulsed laser deposition using a ZnS ceramic target with varying O2 partial pressures. Single …

Molecular beam and pulsed laser deposition of ZnS: Cr for intermediate band solar cells

M Nematollahi, X Yang, LMS Aas, Z Ghadyani… - Solar Energy Materials …, 2015 - Elsevier
We have investigated the structural and optical properties of Cr-doped ZnS (ZnS: Cr) thin
films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si …

Lattice orientation heredity in the transformation of 2D epitaxial films

X Xu, J Smajic, K Li, JW Min, Y Lei… - Advanced …, 2022 - Wiley Online Library
The ability to control lattice orientation is often an essential requirement in the growth of both
2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal …

Ab-initio study of fundamental properties of ternary ZnO1− xSx alloys by using special quasi-random structures

M Rashid, NA Noor, B Sabir, S Ali, M Sajjad… - Computational materials …, 2014 - Elsevier
We employed the special quasi-random structure (SQS) approach to investigate the
structural, electronic and optical properties of the binary compounds (ZnO and ZnS) and …

Mechanism for heteroepitaxial growth of transparent p-type semiconductor: LaCuOS by reactive solid-phase epitaxy

H Hiramatsu, H Ohta, T Suzuki, C Honjo… - Crystal growth & …, 2004 - ACS Publications
A unique epitaxial growth method, reactive solid-phase epitaxy, was used to fabricate
heteroepitaxial thin films of LaCuOS, a transparent p-type semiconductor with layered …

p-Type LaCuOS films grown by PLD using a quaternary target fabricated by a two-step solid-state reaction/sulfurization process

K Rodríguez-Rosales, J Cruz-Gómez… - Materials Science and …, 2024 - Elsevier
A LaCuOS target was obtained through a two-step route: first, the synthesis of the CuLaO 2
compound by solid-state reaction, and subsequently its sulfurization under a sulfur …

Solvothermal synthesis of uniform hexagonal-phase ZnS nanorods using a single-source molecular precursor

YC Zhang, GY Wang, XY Hu, WW Chen - Materials research bulletin, 2006 - Elsevier
Pure and uniform hexagonal-phase ZnS nanorods with quantum confinement effect were
synthesized by solvothermal decomposition of an air-stable, easily obtained single-source …