Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

Low-frequency noise with a spectral density that depends inversely on frequency has been
observed in a wide variety of systems including current fluctuations in resistors, intensity …

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and
application of nanoscale devices. Here, we quantitatively investigate low-frequency …

Low-frequency noise with the spectral density S (f)∼ 1/f γ (f is the frequency and γ≈ 1) is a
ubiquitous phenomenon, which hampers operation of many devices and circuits. A long …

We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices
that accounts for the unusual and so far unexplained experimental characteristics. We find …

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements
in MoS 2 field-effect transistors revealing the relative contributions of the MoS 2 channel and …

We have investigated low-frequency 1/f noise in the boron nitride–graphene–boron nitride
heterostructure field-effect transistors on Si/SiO 2 substrates (f is a frequency). The device …

Low-frequency noise is a significant limitation on the performance of nanoscale electronic
devices. This limitation is especially important for devices based on two-dimensional (2D) …

As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …

Graphene-based photodetectors have shown responsivities up to 108 A/W and
photoconductive gains up to 108 electrons per photon. These photodetectors rely on a …