Porous silicon: a quantum sponge structure for silicon based optoelectronics
O Bisi, S Ossicini, L Pavesi - Surface science reports, 2000 - Elsevier
The striking photoluminescence properties of porous silicon have attracted considerable
research interest since their discovery in 1990. Luminescence is due to excitonic …
research interest since their discovery in 1990. Luminescence is due to excitonic …
[图书][B] Optical properties of semiconductor quantum dots
U Woggon - 1997 - Springer
This book presents an overview of the current understanding of the physics of zero-
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …
Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures
L Canham - Faraday Discussions, 2020 - pubs.rsc.org
A variety of silicon-based nanostructures with dimensions in the 1–5 nm range now emit
tunable photoluminescence (PL) spanning the visible range. Achievement of high …
tunable photoluminescence (PL) spanning the visible range. Achievement of high …
Nanostructured silicon photoelectrodes for solar water electrolysis
Inspired by photosynthesis, solar water electrolysis uses sunlight to produce hydrogen, a
clean, sustainable and storable fuel and a promising solution to the energy storage …
clean, sustainable and storable fuel and a promising solution to the energy storage …
From Si nanowires to porous silicon: the role of excitonic effects
We show that the electronic and optical properties of silicon nanowires, with different size
and orientation, are dominated by important many-body effects. The electronic and excitonic …
and orientation, are dominated by important many-body effects. The electronic and excitonic …
Theoretical investigation of silicon nanowires: Methodology, geometry, surface modification, and electrical conductivity using a multiscale approach
The structural and electronic properties of hydrogenated silicon nanowires (SiNWs) oriented
in⟨ 100⟩,⟨ 110⟩,⟨ 111⟩, and⟨ 112⟩ directions are investigated systematically using a …
in⟨ 100⟩,⟨ 110⟩,⟨ 111⟩, and⟨ 112⟩ directions are investigated systematically using a …
Reduced quantum confinement effect and electron-hole separation in SiGe nanowires
Using first-principles methods, we investigate the structural and electronic properties of SiGe
nanowires-based heterostructures, whose lattice contains the same number of Si and Ge …
nanowires-based heterostructures, whose lattice contains the same number of Si and Ge …
Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation
While the orientation-dependent properties of semiconductor nanowires have been
theoretically predicted, their study has long been overlooked in many fields owing to the …
theoretically predicted, their study has long been overlooked in many fields owing to the …
Electronic band structure of high‐index silicon nanowires
We calculated the electronic properties of high‐index free‐standing silicon nanowires. 11
̄2 nanowires are indirect semiconductors for diameters down to 0.8 nm; 110 wires have a …
̄2 nanowires are indirect semiconductors for diameters down to 0.8 nm; 110 wires have a …
Orientation effects in the electronic and optical properties of germanium quantum wires
AN Kholod, VL Shaposhnikov, N Sobolev… - Physical Review B …, 2004 - APS
We have performed first-principles calculations in order to analyze the influence of spatial
orientation on the electronic band structure and optical properties of hydrogenated …
orientation on the electronic band structure and optical properties of hydrogenated …