Atomically precise, δ-doped structures forming electronic devices in Si have been routinely fabricated in recent years by using depassivation lithography in a scanning tunneling …
JA Ivie, Q Campbell, JC Koepke, MI Brickson… - Physical Review …, 2021 - APS
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …
The reaction of boron trichloride with the H-and Cl-terminated Si (1 0 0) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet …
A brief overview of quantum materials and their prospects for applications, in the near, mid, and far‐term in the areas of quantum information science, spintronics, valleytronics, and …
We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their …
The adsorption of AlCl3 on Si (100) and the effect of annealing the AlCl3-dosed substrate were studied to reveal key surface processes for the development of atomic-precision …
Thin, high-density layers of dopants in semiconductors, known as δ-layer systems, have recently attracted attention as a platform for exploration of the future quantum and classical …
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced …
E Frederick, KJ Dwyer, GT Wang, S Misra… - Journal of Physics …, 2021 - iopscience.iop.org
Atomic precision advanced manufacturing (APAM) leverages the highly reactive nature of Si dangling bonds relative to H-or Cl-passivated Si to selectively adsorb precursor molecules …