Atomic-precision advanced manufacturing for Si quantum computing

E Bussmann, RE Butera, JHG Owen, JN Randall… - MRS Bulletin, 2021 - Springer
A materials synthesis method that we call atomic-precision advanced manufacturing
(APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic …

B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)

KJ Dwyer, S Baek, A Farzaneh, M Dreyer… - … Applied Materials & …, 2021 - ACS Publications
Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …

Impact of incorporation kinetics on device fabrication with atomic precision

JA Ivie, Q Campbell, JC Koepke, MI Brickson… - Physical Review …, 2021 - APS
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …

Reaction of BCl3 with H-and Cl-terminated Si (1 0 0) as a pathway for selective, monolayer doping through wet chemistry

D Silva-Quinones, C He, RE Butera, GT Wang… - Applied surface …, 2020 - Elsevier
The reaction of boron trichloride with the H-and Cl-terminated Si (1 0 0) surfaces was
investigated to understand the interaction of this molecule with the surface for designing wet …

Realizing quantum technologies in nanomaterials and nanoscience

SA Iyengar, AB Puthirath… - Advanced Materials, 2023 - Wiley Online Library
A brief overview of quantum materials and their prospects for applications, in the near, mid,
and far‐term in the areas of quantum information science, spintronics, valleytronics, and …

Conductivity and size quantization effects in semiconductor -layer systems

JP Mendez, D Mamaluy - Scientific Reports, 2022 - nature.com
We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …

AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

MS Radue, S Baek, A Farzaneh, KJ Dwyer… - The Journal of …, 2021 - ACS Publications
The adsorption of AlCl3 on Si (100) and the effect of annealing the AlCl3-dosed substrate
were studied to reveal key surface processes for the development of atomic-precision …

Revealing quantum effects in highly conductive δ-layer systems

D Mamaluy, JP Mendez, X Gao, S Misra - Communications Physics, 2021 - nature.com
Thin, high-density layers of dopants in semiconductors, known as δ-layer systems, have
recently attracted attention as a platform for exploration of the future quantum and classical …

Electric current paths in a Si: P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

L Basso, P Kehayias, J Henshaw, MS Ziabari… - …, 2022 - iopscience.iop.org
The recently-developed ability to control phosphorous-doping of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …

The stability of Cl-, Br-, and I-passivated Si (100)-(2× 1) in ambient environments for atomically-precise pattern preservation

E Frederick, KJ Dwyer, GT Wang, S Misra… - Journal of Physics …, 2021 - iopscience.iop.org
Atomic precision advanced manufacturing (APAM) leverages the highly reactive nature of Si
dangling bonds relative to H-or Cl-passivated Si to selectively adsorb precursor molecules …