Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

Materials fabrication with nanoscale structural precision based on bottom-up-type self-
assembly has become more important in various current disciplines in chemistry including …

This paper presents an in-depth review of the memristor from a rigorous circuit-theoretic
perspective, independent of the material the device is made of. From an experimental …

Over the past two decades percolation theory has been used to explain and model a wide
variety of phenomena that are of industrial and scientific importance. Examples include …

Amphiphiles, either synthetic or natural, are structurally simple molecules with the
unprecedented capacity to self-assemble into complex, hierarchical geometries in …

Resistive switching memories based on the formation and dissolution of a metal filament in a
simple metal/oxide/metal structure are attractive because of their potential high scalability …

To realize the continuous development of information and communication equipment, it is
also important to develop devices with new operating principles that overcome the functional …

In order to fulfill the information storage needs of modern societies, the performance of
electronic nonvolatile memories (NVMs) should be continuously improved. In the past few …

Numerous studies suggest critical dynamics may play a role in information processing and
task performance in biological systems. However, studying critical dynamics in these …