The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

Understanding mesoscale ferroelectric domain structures and their switching behavior
under external fields is critical to applications of ferroelectrics. The phase-field method has …

Dislocations are usually expected to degrade electrical, thermal and optical functionality and
to tune mechanical properties of materials. Here, we demonstrate a general framework for …

Solid-state phase transformation is an intriguing phenomenon in crystalline or noncrystalline
solids due to the distinct physical and chemical properties that can be obtained and modified …

Resistive random access memory (ReRAM) based on a resistive switching (RS) effect is a
new type of non-volatile memory device that stores information based on the reversible …

The effect of dislocations on the chemical, electrical and transport properties in oxide
materials is important for electrochemical devices, such as fuel cells and resistive switches …

Organic–inorganic lead-iodide perovskites are attracting tremendous interest because of
their great application potential in optoelectronics and photovoltaics. Despite extensive …

Mechanically driven polarization switching via scanning probe microscopy provides a
valuable voltage‐free strategy for designing ferroelectric nanodomain structures. However, it …

The past few decades have witnessed extensive and intensive studies on ferroelectric
materials with switchable electric polarization due to their broad device applications …

Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical
methods is a significant challenge due to the large mismatch in energy scales between the …