Sub-10 nm patterning with extreme ultraviolet (EUV) light is receiving immediate attention as
a next-generation nanolithography technique, but photoresist materials optimized to EUV …

Abstract ο-Nitrobenzyl (ONB) derivatives are one of the most investigated photo-responsive
functional group that features irreversible photolysis under a light stimulus. They are ease of …

The resolution, line edge roughness, and sensitivity (RLS) trade-off has fundamentally
limited the lithographic performance of chemically amplified resists. Production of next …

Recently, the development of novel metal-containing resists has received much attention in
extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV …

Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene
(PSTS) were prepared by a facile method of modification of polystyrene with sulfonium …

Hybrid metal–organic cluster resist materials, also termed as organo-inorganics,
demonstrate their potential for use in next-generation lithography owing to their ability for …

This review describes the utility of polymethyl methacrylate (PMMA) as a resist for several
types of lithographic processes. Ordinarily, PMMA is only considered an electron beam …

Background: Metal-containing resists entered the mainstream semiconductor industry
process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin …

Solution-based organometallic nanoclusters are unique nanoscale precursors due to the
ability to precisely control their size, shape, structure, and assembly. The interaction of …

Given the need for a next-generation technology node in the area of integrated circuits (ICs),
improvement in the properties of resist materials, particularly sensitivity (ED), resolution …