Tandem nanostructures: a prospective platform for photoelectrochemical water splitting

J Liu, H Zhao, Z Wang, T Hannappel, UI Kramm… - Solar …, 2022 - Wiley Online Library
A platform for efficient photoelectrochemical (PEC) water splitting must fulfil different
requirements: the absorption of the solar spectrum should be maximized in use for charge …

Recent Advancements on Spin Engineering Strategies for Highly Efficient Electrocatalytic Oxygen Evolution Reactions

W Zhao, J Yang, F Xu, B Weng - Small, 2024 - Wiley Online Library
Oxygen evolution reaction (OER) is a widely employed half‐electrode reaction in oxygen
electrochemistry, in applications such as hydrogen evolution, carbon dioxide reduction …

Zn2GeO4/SnO2 Nanowire Heterostructures Driven by Plateau–Rayleigh Instability

J Dolado, KL Renforth, JE Nunn… - Crystal Growth & …, 2019 - ACS Publications
Herein, we report the formation of a particular core–shell structure, with a zinc germanate
(Zn2GeO4) nanowire core and a discontinuous shell of SnO2 nanocrystals, obtained in a …

X-ray photoelectron spectroscopy study of Ga nanodroplet on silica-terminated silicon surface for nanowire growth

L Fouquat, M Vettori, C Botella, A Benamrouche… - Journal of Crystal …, 2019 - Elsevier
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs
nanowires on Si substrates by Molecular Beam Epitaxy (MBE) are studied. The interaction of …

Insights into the arsenic shell decapping mechanisms in As/GaAs nanowires by x-ray and electron microscopy

L Fouquat, X Guan, C Botella, G Grenet… - The Journal of …, 2021 - ACS Publications
Nanowire heterostructures of the oxide (shell)–semiconducting (core) type are of interest for
various applications in energy harvesting, such as electrodes for photocatalysis and in …

Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls

AD Álvarez, N Peric, NAF Vergel, JP Nys… - …, 2019 - iopscience.iop.org
The surface morphology of III–V semiconductor nanowires (NWs) protected by an arsenic
cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning …

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

X Guan, J Becdelievre, A Benali, C Botella, G Grenet… - Nanoscale, 2016 - pubs.rsc.org
We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell
around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and …

Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy

J Becdelievre, X Guan, I Dudko, P Regreny… - …, 2022 - iopscience.iop.org
Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor–liquid–
solid method. In this ultralong regime we show the existence of two features concerning the …

Assessing the insulating properties of an ultrathin SrTiO3 shell grown around GaAs nanowires with molecular beam epitaxy

N Peric, T Dursap, J Becdelievre, M Berthe… - …, 2022 - iopscience.iop.org
We have studied electronic transport in undoped GaAs/SrTiO 3 core–shell nanowires
standing on their Si substrate with two-tip scanning tunneling microscopy in ultrahigh …

Photonic sintering via flash white light combined with deep UV and NIR for SrTiO3 thin film vibration touch panel applications

HJ Hwang, SC Lim, KC Ok, JS Park, HS Kim - Nanotechnology, 2016 - iopscience.iop.org
An ultra-high speed photonic sintering method consisting of flash white light (FWL)
combined with near infrared (NIR) and deep UV light irradiations was developed to fabricate …