(57) ABSTRACT A method of doping a FinFET includes forming a semicon ductor fin on a
Substrate, the Substrate having a first device region and a second device region. The …

The disclosure relates to a? n? eld effect transistor (FinFET). An exemplary structure for a
FinFET comprises a substrate comprising a top surface; a? rst insulation region and a sec …

A structure for a field effect transistor on a substrate that includes a gate stack, an isolation
structure and a source/drain (S/D) recess cavity below the top surface of the substrate …

BACKGROUND As the integrated circuit size is reduced, there were efforts to overcome
problems faced with such size reduction. For example, the performance of a MOSFET is …

A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate
electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is …

6,858.478 B2 2/2005 Chaletal. 2005/0170593 A1 8/2005 Kang et al. 6872, 647 B1 3/2005
Yet al. 2005/0212080 A1 9, 2005 Wu et al. 6,940,747 B1 92005 Sharma et al …

(57) ABSTRACT Related US Application Data A method for producing a SiGe stressor with
high Ge con centration is provided. The method includes providing a (60) Provisional …

(57) ABSTRACT A first terminal and a second terminal of a FinFET transistor are used as two
terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is …

An embodiment of the disclosure includes doping a FinFET. A dopant-rich layer comprising
an dopant is formed on a top surface and sidewalls of a semiconductor fin of a substrate. A …

A Fin field effect transistor includes a fin disposed over a substrate. A gate is disposed over a
channel portion of the fin. A source region is disposed at a first end of the fin. A drain region …