Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
On optical properties and scintillation performance of emerging Ga2O3: Crystal growth, emission mechanisms and doping strategies
As an emerging ultra-wide bandgap compound semiconductor, Ga 2 O 3 has attracted
rapidly growing interest due to its unique physical properties for harsh condition …
rapidly growing interest due to its unique physical properties for harsh condition …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure
A Usseinov, Z Koishybayeva, A Platonenko… - Materials, 2021 - mdpi.com
First-principles density functional theory (DFT) is employed to study the electronic structure
of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange …
of oxygen and gallium vacancies in monoclinic bulk β-Ga2O3 crystals. Hybrid exchange …
Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method
CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic
electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium …
electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium …
Paramagnetic defects and thermoluminescence in irradiated nanostructured monoclinic zirconium dioxide
DV Ananchenko, SV Nikiforov, KV Sobyanin, SF Konev… - Materials, 2022 - mdpi.com
The ESR spectra of nanostructured samples of monoclinic ZrO2 irradiated by electrons with
energies of 130 keV, 10 MeV, and by a beam of Xe ions (220 MeV) have been studied. It has …
energies of 130 keV, 10 MeV, and by a beam of Xe ions (220 MeV) have been studied. It has …
Luminescence spectroscopy of Cr3+ ions in bulk single crystalline β-Ga2O3
A Luchechko, V Vasyltsiv… - Journal of Physics D …, 2020 - iopscience.iop.org
Detailed investigations of the spectroscopic properties of Cr 3+ ions in β-Ga 2 O 3: 0.05% Cr
3+ single crystals grown by the floating zone technique have been performed in the …
3+ single crystals grown by the floating zone technique have been performed in the …
[HTML][HTML] On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals
Currently, Fe doping in the∼ 10 18 cm− 3 range is the most widely available method for
producing semi-insulating single crystalline β-Ga 2 O 3 substrates. Red luminescence …
producing semi-insulating single crystalline β-Ga 2 O 3 substrates. Red luminescence …
Defect energy levels in monoclinic β-Ga2O3
X Zhu, YW Zhang, SN Zhang, XQ Huo, XH Zhang… - Journal of …, 2022 - Elsevier
The defect levels in semiconductor are crucial to the performance of related devices.
However, the positions of the defect levels in monoclinic β-Ga 2 O 3, such as that for oxygen …
However, the positions of the defect levels in monoclinic β-Ga 2 O 3, such as that for oxygen …
Correlation between electrical conductivity and luminescence properties in β-Ga2O3: Cr3+ and β-Ga2O3: Cr, Mg single crystals
V Vasyltsiv, A Luchechko, Y Zhydachevskyy… - Journal of Vacuum …, 2021 - pubs.aip.org
The photoluminescence, excitation, and absorption spectra as well as the electrical
conductivity of β-Ga 2 O 3: Cr and β-Ga 2 O 3: Cr, Mg single crystals were studied. The as …
conductivity of β-Ga 2 O 3: Cr and β-Ga 2 O 3: Cr, Mg single crystals were studied. The as …