GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …

To the best of our knowledge, the 600 C device characteristics detailed here reflect the
highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high …

An experimental method to measure the gate metal temperature of GaN-based high electron
mobility transistors is demonstrated. The technique is based on transient thermoreflectance …

Thermal annealing is a widely used strategy to enhance semiconductor device performance.
However, the process is complex for multi-material multi-layered semiconductor devices …

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors
and other devices with high accuracy is an important and challenging issue. A surface …

Degradation and failure phenomena in high electron mobility transistors (HEMTs) are
complex functions of electrical, thermal, and mechanical stresses as well as the quality of the …

We present a detailed analysis of the effect of low-and high-temperature operating lifetime
(LTOL and HTOL) carried out on 0.15 μm GaN HEMTs for RF applications. Based on several …