Beyond the predictions routinely achievable by first-principles calculations and using metal–
organic chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled …

Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V
semiconductors have been considered as potential platforms for quantum technology. While …

Low-dimensional gallium nitride (GaN) nanoderivatives have recently attracted great
attention, and they are one of the most attractive fields for future development of …

Based on first-principles calculation, we systematically investigated the electronic structure,
charge transfer, and optical properties of the CdO/GaS van der Waals (vdW) heterostructure …

The moisture-induced instability of metal halide perovskites is one of the major challenges
for perovskite devices. Although compositional engineering has been widely employed to …

Outstanding wide‐bandgap semiconductor material such as gallium nitride (GaN) has been
extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment …

Liquid metal (LM) electronic ink (e‐ink) is a promising new‐generation material for printed
electronics. Extended from this ideal platform, such ink can be post‐processed or loaded …

The thickness of monolayers is a fundamental property of two-dimensional (2D) materials
that has not found the necessary attention. It plays a crucial role in their mechanical …

Abstract Context Two-dimensional (2D) nanoheterostructures of materials, integrating
various phase or materials into a single nanosheet have stimulated large-scale research …

Although GaN is a promising candidate for semiconductor devices, degradation of GaN-
based device performance may occur when the device is bombarded by high-energy …