Current laser-based display and lighting applications are invariably using blue laser diodes
(LDs) grown on free-standing GaN substrates, which are costly and smaller in size …

Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor
nanostructures–including defects. The versatile combination of time, spatial, and spectral …

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been
investigated. Two mechanisms responsible for the structural degradation of the multiple …

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading
dislocation was observed under several microscopes (atomic force microscopy, scanning …

The formation of trench defects is observed in 160 nm-thick In x Ga 1− x N epilayers with x≤
0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase …

Structural defects are detrimental to the efficiency and quality of optoelectronic
semiconductor devices. In this work, we study InGaN platelets with a quantum well structure …

We conducted a comprehensive investigation of dislocations in Al0. 46Ga0. 54N. Using
aberration-corrected scanning transmission electron microscopy and energy dispersive X …

We have investigated the optical properties of heterostructured InGaN platelets aiming at red
emission, intended for use as nano-scaled light-emitting diodes. The focus is on the …

InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …

Trench defects in multi‐quantum wells (MQWs) have been considered as flawed structures
that severely degraded the internal quantum efficiency (IQE) of light‐emitting diodes (LEDs) …