Comparison of SF6 and CF4 Plasma Treatment for Surface Hydrophobization of PET Polymer

M Resnik, R Zaplotnik, M Mozetic, A Vesel - Materials, 2018 - mdpi.com
The fluorination of the polymer polyethylene terephthalate in plasma created from SF6 or
CF4 gas at various pressures was investigated. The surface was analysed by X-ray …

Low capacitance through-silicon-vias with uniform benzocyclobutene insulation layers

Q Chen, C Huang, Z Tan, Z Wang - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Low capacitance is critical to the electric performance of through-silicon-vias (TSVs). This
paper reports the development of a low capacitance TSVs by replacing silicon dioxide …

Ultralow-capacitance through-silicon vias with annular air-gap insulation layers

Q Chen, C Huang, D Wu, Z Tan… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Low capacitance is critical to the electric performance of through-silicon vias (TSVs). This
paper reports the development and electrical characterization of ultralow-capacitance TSVs …

Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs)

Q Chen, C Huang, Z Wang - Microelectronics Reliability, 2012 - Elsevier
Through-Silicon-Vias (TSVs) with polymer liners have potential improved electrical and
mechanical reliability for three-dimensional (3D) packaging/integration applications. To …

Reliability of through-silicon-vias (TSVs) with benzocyclobutene liners

Q Chen, W Yu, C Huang, Z Tan, Z Wang - Microelectronics Reliability, 2013 - Elsevier
Through-silicon-vias (TSVs) using benzocyclobutene (BCB) as insulation layers (liners) are
developed and the reliability related issues with regard to mechanical and electrical aspects …

Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs

S Andric, L Ohlsson Fhager, F Lindelöw… - Journal of Vacuum …, 2019 - pubs.aip.org
We present a low-temperature processing scheme for the integration of either lateral or
vertical nanowire (NW) transistors with a multilayer back-end-of-line interconnect stack. The …

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

EA Douglas, J Stevens, K Fishgrab, C Ford… - Journal of Vacuum …, 2012 - pubs.aip.org
Highly anisotropic features of benzocyclobutene, a promising low stress layer for
microelectromechanical systems, were achieved by inductively coupled plasma (ICP) …

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

X Xue, K Zhou, J Cai, Q Wang, Z Wang - Microelectronic Engineering, 2018 - Elsevier
This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate)(PCC), a
thermal decomposable polymer that can be used as a sacrificial material for fabrication of …

Thick benzocyclobutene etching using high density SF6/O2 plasmas

Q Chen, D Zhang, Z Tan, Z Wang, L Liu… - Journal of Vacuum …, 2011 - pubs.aip.org
Etching of thick nonphotosensitive benzocyclobutene (BCB) was investigated using a high
density SF 6/O 2 plasma with an inductively coupled plasma (ICP) etcher. The effects of SF 6 …

Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

D Stoppel, W John, U Zeimer, K Kunkel… - Microelectronic …, 2016 - Elsevier
In this article we report on the reduction of redeposition during inductively coupled plasma
(ICP) etching of benzocyclobutene (BCB) with a soft mask in a sulfur hexafluoride/oxygen …