Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …
high-performance computing and storage devices. As a result, continuous work on …
[HTML][HTML] Ferroelectrics Based on HfO2 Film
CM Song, HJ Kwon - Electronics, 2021 - mdpi.com
The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS
process, has revived interest in ferroelectric memory devices. HfO2 has been found to …
process, has revived interest in ferroelectric memory devices. HfO2 has been found to …
Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization
B Cui, X Wang, Y Li, M Wu, Y Wu, J Liu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-
power VLSI logic and memory applications. However, the demand for high processing …
power VLSI logic and memory applications. However, the demand for high processing …
Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction
HfO2 based ferroelectric materials have great application potential in ferroelectric tunneling
junction. Here, the low temperature annealed Zr-Rich HfxZr films based ferroelectric tunnel …
junction. Here, the low temperature annealed Zr-Rich HfxZr films based ferroelectric tunnel …
Thickness dependence of the crystallization and phase transition in ZrO2 thin films.
Y Guan, J Zhou, H Zhong, W Wang… - Journal of …, 2023 - search.ebscohost.com
Fluorite-structure binary oxides (eg, HfO< sub> 2 and ZrO< sub> 2) have attracted
increasing interest for a broad range of applications including thermal barrier coatings, high …
increasing interest for a broad range of applications including thermal barrier coatings, high …
Effective control of oxygen defects by co-doping of ferroelectric HfO2
Y Tian, Y Zhou, M Zhao, Y Ouyang, X Tao - Applied Physics Letters, 2023 - pubs.aip.org
In this work, the effect of VB metal doping HfO 2 is studied by first-principles calculation. The
doping of VB group elements has special oxygen defect behavior due to its pentavalent …
doping of VB group elements has special oxygen defect behavior due to its pentavalent …
Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf0.45Zr0.55Ox …
DQ Xiao, BB Luo, W Xiong, X Wu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The ferroelectricity of Zr-doped HfO 2 (HZO) thin films induced by low thermal budget
annealing provides great potential to implement the ferroelectric functionalities into the back …
annealing provides great potential to implement the ferroelectric functionalities into the back …
Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation
Abstract Ferroelectricity in Hf 1-x Zr x O 2 (HZO) thin films has garnered significant attention
for advanced memory devices. However, the challenge in understanding nanoscale …
for advanced memory devices. However, the challenge in understanding nanoscale …
Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer
Y Zhang, D Wang, J Wang, C Luo, M Li, Y Li… - Science China …, 2023 - Springer
The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect
transistor (Fe-FET) remains a major challenge for its future commercial production. Here we …
transistor (Fe-FET) remains a major challenge for its future commercial production. Here we …