Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …
and photonics, since it combines a mature and established materials platform with desired …
Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse
applications in communication, computing, and beyond. The integration of on-chip light …
applications in communication, computing, and beyond. The integration of on-chip light …
I/O-efficient iterative matrix inversion with photonic integrated circuits
Photonic integrated circuits have been extensively explored for optical processing with the
aim of breaking the speed and energy efficiency bottlenecks of digital electronics. However …
aim of breaking the speed and energy efficiency bottlenecks of digital electronics. However …
GaAs Templates Selectively Grown on Silicon-on-Insulator for Lasers in Silicon Photonics
Realizing efficient on-chip light sources on Si is a crux for Si-based photonic integrated
circuits (PICs). Lateral aspect ratio trapping (LART) by MOCVD for selective epitaxy of III–V …
circuits (PICs). Lateral aspect ratio trapping (LART) by MOCVD for selective epitaxy of III–V …
Single-mode emission in InP microdisks on Si using Au antenna
An important building block for on-chip photonic applications is a scaled emitter. Whispering
gallery mode cavities based on III–Vs on Si allow for small device footprints and lasing with …
gallery mode cavities based on III–Vs on Si allow for small device footprints and lasing with …
[HTML][HTML] Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template
Template assisted selective epitaxy (TASE) offers an attractive monolithic integration route
for III-V semiconductors on Si, benefitting from reduced defect density and versatility in its …
for III-V semiconductors on Si, benefitting from reduced defect density and versatility in its …
Orbitrap™-SIMS analysis of advanced semiconductor inorganic structures
A Franquet, V Spampinato, S Kayser, W Vandervorst… - Vacuum, 2022 - Elsevier
Shrinking semiconductor device dimensions requires extensive R&D in all areas, inclusive
of the materials characterization techniques and methodologies commonly used. With …
of the materials characterization techniques and methodologies commonly used. With …
[HTML][HTML] Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator
Selective area heteroepitaxy provides an alternate solution for the monolithic integration of
high-performance III-V lasers on Si with effective management of crystalline defects. Here …
high-performance III-V lasers on Si with effective management of crystalline defects. Here …
Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode
We propose a III–V metal-oxide-semiconductor (MOS) optical modulator with a graphene
gate electrode along with the analysis of the modulation properties. With p-type doped …
gate electrode along with the analysis of the modulation properties. With p-type doped …