Physical mechanisms of intersubband-absorption linewidth broadening in -Ge/SiGe quantum wells
We analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge
0.82 Si 0.18 multiquantum wells grown on Si (001) substrates. Supported by a thorough …
0.82 Si 0.18 multiquantum wells grown on Si (001) substrates. Supported by a thorough …
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells
C Ciano, M Virgilio, L Bagolini, L Baldassarre… - Optics …, 2020 - opg.optica.org
We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells,
optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling …
optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling …
Modulated Photoluminescence at Low Temperature Measurements with Controlled Electron Concentration in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells
M Bendayan, J Belhassen, A Karsenty - Journal of Luminescence, 2022 - Elsevier
The analysis of low temperature modulated photoluminescence as a function of the dopant
concentration is presented for GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW). Such …
concentration is presented for GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW). Such …
[PDF][PDF] Terahertz absorption-saturation and emission from electron-doped germanium quantum wells
M DE SETA, M ORTOLANI - flash-project.eu
We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells,
optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling …
optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling …