III-nitride semiconductor light emitting device having amber-to-red light emission (> 600 nm) and a method for making same
YCM Yeh, HS El-Ghoroury, X Li, JC Chen… - US Patent …, 2019 - Google Patents
A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding
layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers …
layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers …
White light emitting structures with controllable emission color temperature
HS El-Ghoroury, MV Kisin, YCM Yeh… - US Patent …, 2018 - Google Patents
Disclosed herein are multi-layered optically active regions for semiconductor light-emitting
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
Light emitting structures with selective carrier injection into multiple active layers
HS El-Ghoroury, MV Kisin, YCM Yeh… - US Patent …, 2021 - Google Patents
Disclosed herein are multi-layered optically active regions for semiconductor light-emitting
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
Nitride-based semiconductor light-emitting device
WH Lin, C Hsieh - US Patent 9,524,869, 2016 - Google Patents
(57) ABSTRACT A nitride-based semiconductor light-emitting device includes a light-
emitting stack comprising a first semicon ductor structure having a first conductivity, a second …
emitting stack comprising a first semicon ductor structure having a first conductivity, a second …
White light emitting structures with controllable emission color temperature
HS El-Ghoroury, MV Kisin, YCM Yeh… - US Patent …, 2019 - Google Patents
Disclosed herein are multi-layered optically active regions for semiconductor light-emitting
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
Nitride-based semiconductor light-emitting device
WH Lin, C Hsieh - US Patent 10,553,749, 2020 - Google Patents
(57) ABSTRACT A nitride-based semiconductor light-emitting device com prises a light-
emitting stack comprising a first semiconduc tor structure having a first conductivity, a second …
emitting stack comprising a first semiconduc tor structure having a first conductivity, a second …
Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
TA Kuhr, RD Schmidt, DC Driscoll… - US Patent 10,756,231, 2020 - Google Patents
Group III nitride based light emitting diode (LED) structures include multiple quantum wells
with barrier-well units that include III nitride interface layers. Each interface layer may have a …
with barrier-well units that include III nitride interface layers. Each interface layer may have a …
Nitride-based light-emitting device
T Takayama, T Nakatani, T Kano… - US Patent 10,680,414, 2020 - Google Patents
A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side
first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor …
first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor …
P-type doping in GaN LEDs for high speed operation at low current densities
B Pezeshki, C Danesh - US Patent 12,132,146, 2024 - Google Patents
A GaN based LED, with an active region of the LED containing one or more quantum wells
(QWs), with the QWs separated by higher energy barriers, with some of the barriers doped …
(QWs), with the QWs separated by higher energy barriers, with some of the barriers doped …
Multi-color light emitting structures with controllable emission color
HS El-Ghoroury, MV Kisin, YCM Yeh… - US Patent …, 2022 - Google Patents
Disclosed herein are multi-layered optically active regions for semiconductor light-emitting
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …
devices (LEDs) that incor porate intermediate carrier blocking layers, the intermediate carrier …