Reflection of light measured in a polarimetric, scatterometric and spectroscopic way allows
the measurement of structures in a broad size range from large (meter) scales like …

In this study, the suitability of Tauc–Lorentz and Gaussian oscillator models to describe
amorphous silicon–carbon alloys of various compositions was tested. The dependence of …

Ion implantation has been a key technology for the controlled surface modification of
materials in microelectronics and generally, for tribology, biocompatibility, corrosion …

This work presents results of comparative studies of the optical absorption coefficient spectra
of ion implanted layers in silicon. Three nondestructive and noncontact techniques were …

Our aim was to make possible to use spectroscopic ellipsometry for mapping purposes
during one measuring cycle (minimum one rotation period of polarizer or analyzer) on many …

An amorphous silicon (α-Si) layers formed on the surface of single-crystal substrate (c-Si) by
low-dose implantation with silver ions were studied by spectroscopic ellipsometry. Ion …

In modern semiconductor manufacturing ion implantation requires precise control and such
a control is impossible without adequate measurements of the implanted media. As the …

The optical properties of thin films usually depend on the preparation conditions. For
example, the microstructure of ion implantation‐caused damage, the grain size of deposited …

Protective SiC-rich nano layer was created by ion beam mixing of Si/C multilayers. The
transformation of the Si and C layers into a homogeneous SiC layer was analyzed using …

Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-
energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron …