This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …

Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-
based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT …

For the development of GaN-based ultraviolet (UV) photodetectors, a simple epilayer
structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using …

Addressing the urgent need for efficient CO 2 reduction, a novel Co@ C catalyst was
synthesized through the pyrolysis of a unique layered metal–organic framework (MOF) …

GaN films were grown on Si (110) substrates using a low-temperature growth technique
based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in …

In this paper, we propose to optimize Al 0.29 Ga 0.71 N/GaN heterostructures on silicon
substrate to obtain high electron mobility transistors featuring high-power/frequency …

In-situ stress evolution as a function of thickness has been investigated and correlated with
the structural properties and surface morphology of GaN buffer layer grown on …

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high
electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double …

Optoelectronic systems based on elements of the nitride family, mainly, those based on
GaN/InGaN alloys offer huge potentialities in solar cell applications, as example in …

GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a
600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE …