Recent trends on junction-less field effect transistors in terms of device topology, modeling, and application

P Raut, U Nanda, DK Panda - … Journal of Solid State Science and …, 2023 - iopscience.iop.org
Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …

Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions

E Chebaki, F Djeffal, H Ferhati, T Bentrcia - Superlattices and …, 2016 - Elsevier
In this paper, we propose a new Double Gate Junctionless (DGJ) MOSFET design based on
both gate material engineering and drain/source extensions. Analytical models for the long …

Analytical model of double gate stacked oxide junctionless transistor considering source/drain depletion effects for CMOS low power applications

S Manikandan, NB Balamurugan, D Nirmal - Silicon, 2020 - Springer
This paper proposes a 2-D analytical model developed for Double Gate Junctionless
Transistor with a SiO 2/HfO 2 stacked oxide structure. The model is solved by Poisson's …

Impact of two gate oxide with no junction metal oxide semiconductor field effect transistor-an analytical model

S Darwin, TSA Samuel, P Vimala - Physica E: Low-dimensional Systems …, 2020 - Elsevier
An analytical model based on physics is used to describe the potential distribution,
horizontal electric field, and drain current of Two Gate Oxide with no junction MOSFET (TOX …

A method for reduction of off state leakage current in symmetric DG JLT

KCD Sarma, S Sharma - Engineering Research Express, 2019 - iopscience.iop.org
A novel method for reduction of off state leakage current in a symmetric double gate
junctionless transistor (DG JLT) is presented in this paper. In this technique a layer of …

Dependence of electrical characteristics of Junctionless FET on body material

A Talukdar, AK Raibaruah, KCD Sarma - Procedia computer science, 2020 - Elsevier
This paper presents a study on how body material properties affects the electrical
characteristics of a Junctionless field effect transistor (JLFET). The study is performed by …

A potential model for parallel gated junctionless field effect transistor

AK Raibaruah, KCD Sarma - Silicon, 2022 - Springer
A 2-D potential model for parallel gated Junctionless field effect transistor is presented in this
paper. The potential model is obtained by solving Poisson's equation. Potential model for …

Quantum mechanical analysis on modeling of surface potential and drain current for nanowire jlfet

N Bora, N Deka, R Subadar - Journal of Nano Research, 2020 - Trans Tech Publ
This paper presents an analytical model for ultra scaled symmetric double gate (SDG)
nanowire junctionless field effect transistor (JLFET), which includes charge quantization in …

Surrounded Channel Junctionless Field Effect Transistor

N Das, KCD Sarma - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
This paper presents the surrounded channel Junctionless field effect transistor (SCJLFET)
concept. A study on electrical characteristics of a SCJLFET is also presented. The gate is …

Parallel gated junctionless field effect transistor

AK Raibaruah, KCD Sarma - 2020 International conference on …, 2020 - ieeexplore.ieee.org
The present work is a novel structure of Junctionless field effect transistor obtained by
splitting the gate into two parts parallelly. The structure is termed as parallel gated structure …