Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based
devices are important for the next generation of high-power and high-voltage electronics that …

High-quality N-polar GaN pn diodes are realized on single-crystal N-polar GaN bulk
substrate by plasma-assisted molecular beam epitaxy. The room-temperature current …

The GaN films/layers exposed to γ-radiations is known to harvest defects and vacancies in
the crystals producing donor, acceptor and recombination centers within the bandgap …

The impact of gamma-irradiation on the unpacked InGaN/GaN LED properties has been
studied. Before gamma irradiation exposure, three peaks located at 400, 447 and 568 nm …

Gamma-ray-induced luminescence is observed from impurity-doped gallium phosphide
(GaP) single crystal wafer at room temperature. The luminescence properties are studied for …

We report the nanosecond alpha-ray response and gamma-ray radiation resistance of a
hydrothermal-grown bulk zinc oxide (ZnO) single crystal. For its initial screening as a …

Aluminum is an important energetic component of many solid propellants, explosives, and
pyrotechnic formulations [1–4]. One critical parameter of aluminum combustion, universally …