MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications

W Chen, Y Wu - US Patent 9,230,571, 2016 - Google Patents
(57) ABSTRACT A design for a microwave assisted magnetic recording device is disclosed
wherein a spin torque oscillator (STO) between a main pole and write shield has a spin …

MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications

W Chen, Y Wu - US Patent 9,966,091, 2018 - Google Patents
A design for a microwave assisted magnetic recording device is disclosed wherein a spin
torque oscillator (STO) between a main pole and write shield has a spin polarization (SP) …

Magnetoresistive effect element and manufacturing method thereof

H Fukuzawa, H Yuasa, Y Fuji, H Iwasaki - US Patent 8,048,492, 2011 - Google Patents
(57) ABSTRACT A magnetoresistive effect element is produced by forming a first magnetic
layer, a spacer layer including an insulating layer and a conductive layer which penetrates …

Magnetic recording element including a thin film layer with changeable magnetization direction

H Fukuzawa, Y Fuji, H Yuasa, H Iwasaki - US Patent 8,274,766, 2012 - Google Patents
O having a substantially fixed magnetization direction; a thin film layer disposed on the first
magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second …

Magnetic recording assisted by two spin hall effect (SHE) layers in the write gap

W Chen, Y Wu - US Patent 10,580,441, 2020 - Google Patents
(57) ABSTRACT A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed
wherein a stack of two SHE layers with an intermediate insulation layer is formed between a …

Magnetic flux guiding device with antiferromagnetically coupled (AFC) oscillator in assisted writing application

W Chen, S Kawasaki, T Roppongi, Y Wu - US Patent 10,490,216, 2019 - Google Patents
A spin torque transfer (STO) assisted magnetic recording structure is disclosed wherein a
STO device has capability to generate a radio frequency (RF) field on a magnetic bit to lower …

Magnetic recording assisted by a single spin hall effect (SHE) layer in the write gap

W Chen, Y Wu - US Patent 10,559,318, 2020 - Google Patents
(57) ABSTRACT A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed
wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main …

Dual magnetic tunnel junction (DMTJ) stack design

V Sundar, YJ Wang, L Thomas, G Jan, S Patel… - US Patent …, 2020 - Google Patents
A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free
layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a …

Magnetic flux guiding device with antiferromagnetically coupled (AFC) spin polarizer in assisted writing application

W Chen, S Kawasaki, T Roppongi, Y Wu - US Patent 10,522,174, 2019 - Google Patents
(57) ABSTRACT A spin torque transfer (STT) assisted magnetic recording structure is
disclosed wherein a magnetic flux guiding (MFG) device is formed between a main pole …

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

V Sundar, YJ Wang, L Thomas, G Jan - US Patent 10,522,746, 2019 - Google Patents
(57) ABSTRACT A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free
layer/TB2/PL2 configuration wherein a first tunnel barrier (TB1) has a substantially lower …