This paper presents the findings of a design, modeling, and fabrication study of ZnO and
PbZr/sub 0.3/Ti/sub 0.7/O/sub 3/thin-film bulk acoustic resonators and filters. Measurements …

This technical review presents the state of the art in low-temperature chemical solution
deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of …

We have investigated the effects of Mn doping on the ferroelectric and pyroelectric
properties of Pb (Zr 0.3 Ti 0.7) O 3 (PZT) thin films on substrates Pt/Ti/SiO 2/Si. The Mn …

Antiferroelectric lanthanum-modified Pb Zr O 3 thin films with La contents between 0 and 6
at.% have been deposited on Pt (111)∕ Ti∕ Si O 2∕ Si substrate by sol-gel route. On the …

Thin films of ferroelectric lead zirconate titanate (PbZr 0.3 Ti 0.7 O 3 PZT30/70) and
manganese-doped lead zirconate titanate ((Pb (Zr 0.3 Ti 0.7) 1-x Mn x) O 3, where x= 0.01 …

The microelectronics industry is based on silicon as a material which, after a controlled
reaction with oxygen, forms a SiO2 insulator. This dielectric is used in silicon semiconductor …

This paper describes the effects of multi-coating processes on the orientation, microstructure
and electrical property of lead zirconate titanate (PZT) thick films derived by chemical …

Abstract Antiferroelectric Sm-doped PbZrO 3 (PSZO) thin films were prepared on Pt
(111)/Ti/SiO 2/Si substrates using a chemical solution deposition method. The effects of Sm …

Antiferroelectric PbZrO3 thin films have been deposited on Pt (111)/Ti/SiO2/Si substrate by
polymer modified sol–gel route. Temperature dependent P–E hysteresis loops have been …

Lead zirconate titanate (PZT) thin films on platinized silicon were fabricated and their
structural development upon annealing was characterized by x-ray diffraction and …