Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …

This study utilized various phosphorus-ion implantation techniques, incorporating low,
medium, and high doses, to investigate the electrical properties of unintentionally doped β …

Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries.
In this work, we observed and interpreted the emergence of p-type conductivity at the κ-Ga 2 …

We investigated atomic site occupancy for the Si dopant in Si-doped κ-Ga2O3 (001) using
photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and …

In this work, hybrid density functional theory calculations are used to evaluate the structural
and electronic properties and formation energies of Si-doped β-Ga2O3. Overall, eight …

β-G a 2 O 3 is an ultrawide band-gap semiconductor with importance for various
technological applications. We investigated the tracer diffusion of oxygen and aluminum (as …

The orthorhombic ε-Ga 2 O 3 has received attention due to its ultra-wide bandgap (4.9 eV),
high lattice symmetry and unique theoretically spontaneous polarization, etc. Controlled …

Asymmetric doping of wide-gap semiconductors has long been a major challenge, hindering
their wider applications. Despite numerous attempts to address this issue through …

Gallium oxide (Ga2O3) thin films of various thicknesses were grown on sapphire (0001)
substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium …