[HTML][HTML] In-memory computing with emerging memory devices: Status and outlook
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …
suppress the memory bottleneck, which is the major concern for energy efficiency and …
Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing
Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …
Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update
Pseudo-crossbar arrays using ferroelectric field effect transistor (FEFET) mitigates weight
movement and allows in situ vector–matrix multiplication (VMM), which can significantly …
movement and allows in situ vector–matrix multiplication (VMM), which can significantly …
Tunable non-volatile gate-to-source/drain capacitance of FeFET for capacitive synapse
Using “capacitive” crossbar arrays for compute-in-memory (CIM) offers higher energy
efficiency compared to “resistive” crossbar arrays. The non-volatile capacitive (nvCap) …
efficiency compared to “resistive” crossbar arrays. The non-volatile capacitive (nvCap) …
A 3D vertical-channel ferroelectric/anti-ferroelectric FET with indium oxide
Z Li, J Wu, X Mei, X Huang, T Saraya… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A vertical channel ferroelectric-FET (FeFET) with HfO 2-based ferroelectric (Fe-HfO 2) and
atomic layer deposition (ALD) Indium oxide (InOx) channel has been developed and …
atomic layer deposition (ALD) Indium oxide (InOx) channel has been developed and …
Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications
Emulating the human nervous system to build next-generation computing architectures is
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
considered a promising way to solve the von Neumann bottleneck. Transistors based on …
Disturb-free operations of multilevel cell ferroelectric FETs for NAND applications
C Jin, J Xu, J Gu, J Zhao, X Jia, J Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We have experimentally investigated disturb-free operations of multilevel cell (MLC)
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …
A multi-bit CAM design with ultra-high density and energy efficiency based on FeFET NAND
C Jin, J Xu, J Zhao, J Gu, J Chen, H Liu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
We have proposed and experimentally demonstrated a novel multi-bit content addressable
memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to …
memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to …
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
Q Li, S Wang, Z Li, X Hu, Y Liu, J Yu, Y Yang… - Nature …, 2024 - nature.com
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is
an increasing demand for high-performance flexible ferroelectric memories. However …
an increasing demand for high-performance flexible ferroelectric memories. However …