GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

The most successful example of large lattice-mismatched epitaxial growth of semiconductors
is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and …

Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …

Correlated atom probe tomography, cross-sectional scanning transmission electron
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …

We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell
nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown …

In the past few years, tremendous progress has been demonstrated on epitaxial growth and
processing of group III nitride nano‐and microrods (NAMs). This has also enabled the …