Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …

This paper reviews several high‐k ALD processes potentially applicable to the production of
capacitors, concentrating on very recent developments. A list of the dielectric materials …

Mixed alkylamido-cyclopentadienyl compounds of zirconium,(RCp) Zr (NMe2) 3 (R= H, Me
or Et) are introduced as precursors for atomic layer deposition (ALD) of high permittivity …

The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated
for its unique advantages such as excellent repeatability, conformity, and thickness control at …

The need for the conformal deposition of TiO2 thin films in device fabrication has motivated a
search for thermally robust titania precursors with noncorrosive byproducts. Alkylamido …

Thin films of ZrO2 and HfO2 have been deposited by liquid injection metalorganic chemical
vapour deposition (MOCVD) and atomic layer deposition (ALD) using a range of ansa …

Atomic layer deposition (ALD) of ZrO 2 thin films was investigated using a linked
cyclopentadienyl-amido compound of zirconium,{η 5: η 1-Cp (CH 2) 3 NMe} Zr (NMe 2) 2 …

ZrO2 thin films were grown onto silicon (100) substrates by atomic layer deposition (ALD)
using novel cyclopentadienyl-type precursors, namely (CpMe) 2ZrMe2 and (CpMe) 2Zr …

[Zr (NEtMe) 2 (guan-NEtMe2) 2], a recently developed compound, was investigated as a
novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen …