Silicon is the most widely used material in numerous fields. Traditional mechanical
machining methods have been unable to meet the higher requirements of processing …

Transparent brittle materials such as glass and sapphire are widely concerned and applied
in consumer electronics, optoelectronic devices, etc. due to their excellent physical and …

Abstract 4H-SiC wafer with alloy backside layer is gradually applied in power devices.
However, the laminated structure presents various challenges in manufacturing. In this …

Micro-light-emitting diodes (micro-LEDs) with outstanding performance are promising
candidates for next-generation displays. To achieve the application of high-resolution …

Ultrafast pulsed laser for wafer processing has been promising in the semiconductor
industry due to its high precision and low thermal effect. The microstructure and defect …

We report on a one-step method for cutting 250-µm-thick quartz plates using highly focused
ultrashort laser pulses with a duration of 200 fs and a wavelength of 1030 nm. We show that …

Silicon carbide (SiC), with its wide bandgap and high thermal conductivity, is considered a
next-generation semiconductor material, which is driven by fast growth in energy-efficient …

With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at
high voltage, high switching frequency, and high temperature. However, for SiC wafers with …

Previous approaches for laser beam cutting of sapphire often lead to chipping, debris, large
kerf widths, tapering and high surface roughness or nonuniform surfaces. Laser beam …

Effective modulation of the internal modification structure is critical for enhancing the quality
and efficiency of ultrafast laser dicing in SiC wafer. This paper achieves modulation of the …