Single‐photon emitters (SPEs) have recently been discovered in various atomically thin
materials. Their properties, controllability, and the possibility of their monolithic integration in …

As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is
gaining significant attention for its superior properties and wide applications. Although …

Boron nitride nanosheets (BNNSs) are regarded as promising two-dimensional materials in
thermally conductive yet electrically insulating applications. Attributed to the strong interlayer …

Strong light–matter interactions in two-dimensional layered materials (2D materials) have
attracted the interest of researchers from interdisciplinary fields for more than a decade now …

Recently, hBN has become an interesting platform for quantum optics due to the peculiar
defect-related luminescence properties. In this work, multicolor radiative emissions are …

Deep ultraviolet (UV) photoluminescence (PL) and x-ray photoemission spectroscopy (XPS)
were employed to investigate the origin of the atomic-like emission line at 4.09 eV from …

Deep ultraviolet (UV) photoluminescence (PL) spectroscopy was employed to study the
luminescence properties of hexagonal boron nitride (h-BN) crystal powders after annealing …

In this dissertation work, optical properties of wide bandgap materials such as hexagonal
Boron Nitride (h-BN) and Zinc Oxide (ZnO) have been studied. Deep UV photoluminescence …