Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-) metallic phases

X Yin, CS Tang, Y Zheng, J Gao, J Wu… - Chemical Society …, 2021 - pubs.rsc.org
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an
extensive amount of interest amongst scientists and engineers alike and an intensive …

[HTML][HTML] Siesta: Recent developments and applications

A García, N Papior, A Akhtar, E Artacho… - The Journal of …, 2020 - pubs.aip.org
A review of the present status, recent enhancements, and applicability of the S iesta program
is presented. Since its debut in the mid-1990s, S iesta's flexibility, efficiency, and free …

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

X Yang, J Li, R Song, B Zhao, J Tang, L Kong… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Interaction-and defect-free van der Waals contacts between metals and two-dimensional semiconductors

G Kwon, YH Choi, H Lee, HS Kim, J Jeong, K Jeong… - Nature …, 2022 - nature.com
High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning
can degrade the performance of electronic devices and increase their energy consumption …

Investigation of Contact Electrification between 2D MXenes and MoS2 through Density Functional Theory and Triboelectric Probes

H Gao, M Hu, J Ding, B Xia, G Yuan… - Advanced Functional …, 2023 - Wiley Online Library
Abstract Contact electrification (triboelectrification)(CE) is a universal phenomenon in
ambient environment and has been recorded for more than 2600 years. Nonetheless, the …

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Q Wang, L Cao, SJ Liang, W Wu, G Wang… - npj 2D Materials and …, 2021 - nature.com
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Y Liu, J Guo, E Zhu, L Liao, SJ Lee, M Ding, I Shakir… - Nature, 2018 - nature.com
The junctions formed at the contact between metallic electrodes and semiconductor
materials are crucial components of electronic and optoelectronic devices. Metal …

Contact engineering for 2D materials and devices

DS Schulman, AJ Arnold, S Das - Chemical Society Reviews, 2018 - pubs.rsc.org
Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …

MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection

T Pham, G Li, E Bekyarova, ME Itkis, A Mulchandani - ACS nano, 2019 - ACS Publications
Red light illumination with photon energy matching the direct band gap of chemical vapor
deposition grown single-layer MoS2 with Au metal electrodes was used to induce a …

Visible-Light Driven Overall Conversion of CO2 and H2O to CH4 and O2 on 3D-SiC@2D-MoS2 Heterostructure

Y Wang, Z Zhang, L Zhang, Z Luo, J Shen… - Journal of the …, 2018 - ACS Publications
A marigold-like SiC@ MoS2 nanoflower with a unique Z-scheme structure efficiently
achieves the overall conversion of gas phase CO2 with H2O (CO2 (g)+ 2H2O (g)= CH4+ …