Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes
Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …
Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …
Oxygen vacancies modulating the photodetector performances in ε-Ga 2 O 3 thin films
By acting as the trapping centers during charge carrier transfer, oxygen vacancy (VO) plays
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
a critical role in oxide photoelectric devices. Herein, a post-annealing method was …
[HTML][HTML] Substrate-orientation dependence of β-Ga2O3 (100),(010),(001), and (2¯ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam …
P. Mazzolini, A. Falkenstein, C. Wouters, R. Schewski, T. Markurt, Z. Galazka, M. Martin, M.
Albrecht, O. Bierwagen; Substrate-orientation dependence of β-Ga 2 O 3 (100),(010),(001) …
Albrecht, O. Bierwagen; Substrate-orientation dependence of β-Ga 2 O 3 (100),(010),(001) …