Dishing prevention dummy structures for semiconductor devices
Y Chen, CC Chou, TW Lin, FJ Fan, KB Thei… - US Patent …, 2019 - Google Patents
In some embodiments, an integrated circuit is provided. The integrated circuit may include
an inner ring-shaped isolation structure that is disposed in a semiconductor substrate …
an inner ring-shaped isolation structure that is disposed in a semiconductor substrate …
Segmented NPN vertical bipolar transistor
HL Edwards, AA Salman, MI Mahmud - US Patent 9,153,569, 2015 - Google Patents
BACKGROUND Bipolar junction transistors are active semiconductor devices formed by a
pair of PN junctions, including an emit ter-base junction and a collector-base junction. An …
pair of PN junctions, including an emit ter-base junction and a collector-base junction. An …
Dishing prevention columns for bipolar junction transistors
Y Chen, CC Chou, KB Thei, LIN Meng-Han - US Patent 10,510,685, 2019 - Google Patents
In some embodiments, a bipolar junction transistor (BJT) is provided. The BJT may include a
collector region that is disposed within a semiconductor substrate. A base region that is …
collector region that is disposed within a semiconductor substrate. A base region that is …
ESD protection circuit with plural avalanche diodes
HL Edwards, AA Salman, L Yu - US Patent 9,231,403, 2016 - Google Patents
An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
Surrounded emitter bipolar device
HL Edwards, AA Salman - US Patent 10,269,898, 2019 - Google Patents
(57) ABSTRACT A surrounded emitter bipolar device includes a substrate having ap-
epitaxial (p-epi) layer thereon, and ap-base in the p-epi layer. A two dimensional (2D) array …
epitaxial (p-epi) layer thereon, and ap-base in the p-epi layer. A two dimensional (2D) array …
ESD protection circuit with plural avalanche diodes
HL Edwards, AA Salman, L Yu - US Patent 9,899,368, 2018 - Google Patents
An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
ESD protection circuit with plural avalanche diodes
HL Edwards, AA Salman, L Yu - US Patent 9,997,511, 2018 - Google Patents
An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes …
Dishing prevention dummy structures for semiconductor devices
Y Chen, CC Chou, TW Lin, FJ Fan, KB Thei… - US Patent …, 2019 - Google Patents
In some embodiments, an integrated circuit is provided. The integrated circuit may include
an inner ring-shaped isolation structure that is disposed in a semiconductor substrate …
an inner ring-shaped isolation structure that is disposed in a semiconductor substrate …
ESD protection circuit with passive trigger voltage controlled shut-off
KPM Rajagopal, AM Concannon, V Joshi… - US Patent …, 2020 - Google Patents
Disclosed examples include an ESD protection circuit, including a transistor operative
according to a control voltage signal at a control node to selectively conduct current from a …
according to a control voltage signal at a control node to selectively conduct current from a …
Dishing prevention dummy structures for semiconductor devices
Y Chen, CC Chou, TW Lin, FJ Fan, KB Thei… - US Patent …, 2023 - Google Patents
2021-03-04 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …