First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

Compact high-efficiency ultraviolet solid-state light sources—such as light-emitting diodes
(LEDs) and laser diodes—are of considerable technological interest as alternatives to large …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …

Mg-doped AlN epilayers were grown by metalorganic chemical vapor deposition on
sapphire substrates. Deep UV picosecond time-resolved photoluminescence PL …

Beryllium has long been predicted by first principle theory as the best p‐type dopant for GaN
and AlN. But experimental validation of these theories has not, until now, borne out the …

Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …

Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …

This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …