Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications
Single photon source (SPS) is a key element for quantum spintronics and quantum
photonics. It is known that several color centers such as silicon vacancy (V Si), divacancy (V …
photonics. It is known that several color centers such as silicon vacancy (V Si), divacancy (V …
SiC power MOSFETs performance, robustness and technology maturity
Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
We present results from combined Laplace-Deep Level Transient Spectroscopy (Laplace-
DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC …
DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC …
Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire
H Huang, Y Zhang, X Xu - The International Journal of Advanced …, 2015 - Springer
Machining characteristics and surface profiles were systematically investigated during the
fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material …
fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material …
Amplifier based on 4H-SiC MOSFET operation at 500° C for harsh environment applications
V Van Cuong, T Meguro, S Ishikawa… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Successful operation of 4H-silicon carbide (SiC) MOSFET and integrated electronic circuit
based on 4H-SiC MOSFET is reported at temperature up to in air. The high-temperature …
based on 4H-SiC MOSFET is reported at temperature up to in air. The high-temperature …
EDM mechanism of single crystal SiC with respect to thermal, mechanical and chemical aspects
Y Zhao, M Kunieda, K Abe - Journal of Materials Processing Technology, 2016 - Elsevier
In this study, electrical discharge machining (EDM), a non-contact thermal machining
process, is proposed for machining single crystal silicon carbide (SiC) which exhibits …
process, is proposed for machining single crystal silicon carbide (SiC) which exhibits …
Promise and challenges of high-voltage SiC bipolar power devices
Although various silicon carbide (SiC) power devices with very high blocking voltages over
10 kV have been demonstrated, basic issues associated with the device operation are still …
10 kV have been demonstrated, basic issues associated with the device operation are still …
Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing
Silicon carbide (SiC), as a wide-band gap semiconductor, plays an important role in high
temperature and high-power devices, and the spin defect has great application prospect in …
temperature and high-power devices, and the spin defect has great application prospect in …
Ultra-precision dicing and wire sawing of silicon carbide (SiC)
S Cvetković, C Morsbach, L Rissing - Microelectronic Engineering, 2011 - Elsevier
This work presents results of mechanical machining investigations of two silicon carbide
(SiC) variants, monocrystalline SiC and polycrystalline (sintered) SiC ceramic. Two standard …
(SiC) variants, monocrystalline SiC and polycrystalline (sintered) SiC ceramic. Two standard …
Quantitative analysis of nanoscale step dynamics in high-temperature solution-grown single crystal 4H-SiC via in situ confocal laser scanning microscope
A Onuma, S Maruyama, N Komatsu… - Crystal Growth & …, 2017 - ACS Publications
Nanoscale understanding of high-temperature crystal growth dynamics in solution has been
a challenge to be tackled by many researchers engaged in investigating solution processes …
a challenge to be tackled by many researchers engaged in investigating solution processes …