Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing

Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu… - Advanced …, 2020 - Wiley Online Library
Spiking neural networks (SNNs) sharing large similarity with biological nervous systems are
promising to process spatiotemporal information and can provide highly time‐and energy …

One transistor one electrolyte‐gated transistor based spiking neural network for power‐efficient neuromorphic computing system

Y Li, Z Xuan, J Lu, Z Wang, X Zhang… - Advanced Functional …, 2021 - Wiley Online Library
Neuromorphic computing powered by spiking neural networks (SNN) provides a powerful
and efficient information processing paradigm. To harvest the advantage of SNNs, compact …

Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg3Sb2‐Based Thermoelectric Materials

T Luo, JJ Kuo, KJ Griffith, K Imasato… - Advanced Functional …, 2021 - Wiley Online Library
The poor carrier mobility of polycrystalline Mg3Sb2 at low temperatures strongly degrades
the thermoelectric performance. Ionized impurities are initially thought to dominate charge …

Kinetic 2D crystals via topochemical approach

J Bae, M Kim, H Kang, T Kim, H Choi, B Kim… - Advanced …, 2021 - Wiley Online Library
The designing of novel materials is a fascinating and innovative pathway in materials
science. Particularly, novel layered compounds have tremendous influence in various …

Tunable electrical field-induced metal-insulator phase separation in LiCoO2 synaptic transistor operating in post-percolation region

W Zhang, Y Chen, C Xu, C Lin, J Tao, Y Lin, J Li… - Nano Energy, 2023 - Elsevier
While mixed ionic-electronic conductors with metal-insulator transition (MIT) are promising
candidates for designing neuromorphic computing hardware, the fundamentals of resistive …

Emerging materials in neuromorphic computing: Guest editorial

GW Burr, A Sebastian, E Vianello, R Waser, S Parkin - APL Materials, 2020 - pubs.aip.org
For more than five decades, the flexibility of the von Neumann architecture—in which data
from discrete memory units arrive at dedicated compute units as both operations and …

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties

B Shen, X Tan, C Wang, H Fan, D Hu… - … Applied Materials & …, 2023 - ACS Publications
Ferroelectric domain walls, agile nanoscale interfaces of polar order, can be selectively
controlled by electric fields for their position, conformation, and function, which is ultimately …

[HTML][HTML] Temporal versatility from intercalation-based neuromorphic devices exhibiting 150 mV non-volatile operation

B Zivasatienraj, M Brooks Tellekamp… - Journal of Applied …, 2020 - pubs.aip.org
Memristors are a promising technology to surpass the limitations of the current silicon
complementary metal-oxide-semiconductor architecture via the realization of neuromorphic …

Ion intercalation enabled tunable frequency response in lithium niobite memristors

A Ghosh, AS Weidenbach… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Memristors have emerged as a viable component for developing neuromorphic hardware
platforms, which can compete with biological systems in density, accuracy, and energy …

Charge transfer in Nb1-xVxSe2 materials: Synchrotron radiation spectroscopy study

AI Merentsov, AS Shkvarin, EM Sherokalova… - Journal of Physics and …, 2023 - Elsevier
The electronic structure of the single-crystalline solid solutions Nb 1-x V x Se 2 has been
studied using soft X-ray photoelectron, resonant photoelectron, and absorption …