In recent years, quasi-1D semiconductor nanowires have attracted significant research
interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V …

The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …

Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding
between crystalline substrate and atomic building blocks, has been a key technique in the …

This Perspective presents a review of current research activities on one-dimensional (1D)
semiconductor nanostructures grown on two-dimensional (2D) nanomaterials for flexible …

The many outstanding properties of graphene have impressed and intrigued scientists for
the last few decades. Its transparency to light of all wavelengths combined with a low sheet …

Ever since the inception of the industrial revolution, artificial acceleration of swift economic
development has contributed to the continuous and ever-increasing demand for energy …

The control of optical and transport properties of semiconductor heterostructures is crucial
for engineering new nanoscale photonic and electrical devices with diverse functions. Core …

III-V semiconductor materials are the basis of photonic devices due to their unique optical
properties. There is an increasing demand for fabricating these devices on unconventional …

We report the successful growth of high-quality GaAs1–x Sb x nanowires on monolayer
graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a …

Antimonide-based ternary III–V nanowires (NWs) provide a tunable bandgap over a wide
range, and the GaAsSb material system has prospective applications in the 1.3–1.55 μm …