[HTML][HTML] Machine learning for semiconductors

DY Liu, LM Xu, XM Lin, X Wei, WJ Yu, Y Wang, ZM Wei - Chip, 2022 - Elsevier
Thanks to the increasingly high standard of electronics, the semiconductor material science
and semiconductor manufacturing have been booming in the last few decades, with massive …

[HTML][HTML] Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines

X Li, Z Wu, G Rzepa, M Karner, H Xu, Z Wu… - Fundamental …, 2024 - Elsevier
Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …

Superior printed parts using history and augmented machine learning

M Jiang, T Mukherjee, Y Du, T DebRoy - npj Computational Materials, 2022 - nature.com
Abstract Machine learning algorithms are a natural fit for printing fully dense superior
metallic parts since 3D printing embodies digital technology like no other manufacturing …

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM …

R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao… - Journal of Materials …, 2022 - pubs.rsc.org
Aluminium gallium nitride (AlGaN)-based deep ultraviolet (DUV) light-emitting diodes
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …

A machine learning approach for optimization of channel geometry and source/drain doping profile of stacked nanosheet transistors

H Xu, W Gan, L Cao, C Yang, J Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complex nonlinear dependence of ultra-scaled transistor performance on its channel
geometry and source/drain (S/D) doping profile bring obstacles in the advanced technology …

Machine learning-based device modeling and performance optimization for FinFETs

H Zhang, Y Jing, P Zhou - … on Circuits and Systems II: Express …, 2022 - ieeexplore.ieee.org
This brief introduces a machine learning based framework to model FinFET's IV and CV
curves with artificial neural networks and to further optimize FinFET's performance on DC …

Tcad device simulation with graph neural network

W Jang, S Myung, JM Choe, YG Kim… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
There is an increasing number of studies to accelerate the TCAD simulation with deep
learning models. Such studies rely on performing a procedure that interpolates an …

Using machine learning with optical profilometry for GaN wafer screening

JC Gallagher, MA Mastro, MA Ebrish, AG Jacobs… - Scientific Reports, 2023 - nature.com
To improve the manufacturing process of GaN wafers, inexpensive wafer screening
techniques are required to both provide feedback to the manufacturing process and prevent …

TCAD simulation models, parameters, and methodologies for β-Ga2O3 power devices

HY Wong - ECS Journal of Solid State Science and Technology, 2023 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging material and has the potential to revolutionize power
electronics due to its ultra-wide-bandgap (UWBG) and lower native substrate cost compared …

Rapid MOSFET contact resistance extraction from circuit using SPICE-augmented machine learning without feature extraction

T Lu, V Kanchi, K Mehta, S Oza, T Ho… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
It is desirable to monitor the degradation of integrated circuits (ICs) or perform their failure
analysis through their electrical characteristics [such as the voltage-transfer characteristic …