Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-NV alloys using artificial neural networks
The physical properties of the low bandgap III-VN-Sb semiconductor elaborated on a GaAs
substrate were modeled. The effect of deformation owing to lattice mismatch was …
substrate were modeled. The effect of deformation owing to lattice mismatch was …
Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
Investigation of defect creation in GaP/Si (0 0 1) epitaxial structures
This work investigates defect formation and evolution associated with the deposition of GaP
layers on precisely oriented Si (0 0 1) substrates. The GaP layers were grown with …
layers on precisely oriented Si (0 0 1) substrates. The GaP layers were grown with …
Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs1-x-yNxSby alloys and GaAs1-x-yNxSby/GaAs quantum wells calculated …
GaAsNSb is a promising candidate for use in GaAs-based optoelectronic devices in the 1.33–
1.55 μm wavelength region. We have calculated the band structure of dilute nitride …
1.55 μm wavelength region. We have calculated the band structure of dilute nitride …
Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices
A method for the determination of N distribution in dilute nitride GaAsSbN superlattices (SLs)
by using different STEM imaging settings is proposed. The method combines the …
by using different STEM imaging settings is proposed. The method combines the …
Electronic band structure of nitrogen diluted Ga (PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states
The electronic band structure of Ga (PAsN) with a few percent of nitrogen is calculated in the
whole composition range of Ga (PAs) host using density functional methods including the …
whole composition range of Ga (PAs) host using density functional methods including the …
Optimization and comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs
W Bellil, A Aissat, JP Vilcot - Procedia Computer Science, 2019 - Elsevier
In this work we study and optimize the single solar cell efficiency of GaN x As 1-xy Sb y and
Ga 1-x In x N y As 1-y deposed on GaAs. The solar cells are simulated, in the aim to find the …
Ga 1-x In x N y As 1-y deposed on GaAs. The solar cells are simulated, in the aim to find the …
Theoretical comparative study of the band offset and band offset ratio of the GaNAsSb/GaAs and GaNAsSb/GaSb quantum well structures
The aim of this work is to investigate the band alignment and offset ratio configurations of
GaNAsSb on GaAs and GaSb substrates. The BAC (band anti-crossing) model and Model …
GaNAsSb on GaAs and GaSb substrates. The BAC (band anti-crossing) model and Model …