A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal
seed plates are suspended in a rack, placed in a large diameter autoclave or internally …

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an
added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered …

A high pressure apparatus and related methods for processing supercritical fluids. In a
specific embodiment, the present apparatus includes a capsule, a heater, at least one …

An edge emitting solid state laser and method. The laser comprises at least one AlInGaN
active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of …

A packaged optical device includes a substrate having a surface region with light emitting
diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit …

Techniques for processing materials in supercritical fluids including processing in a capsule
disposed within a high-pressure apparatus enclosure are disclosed. The disclosed …

A gallium and nitrogen containing substrate structure includes a handle substrate member
having a first surface and a second surface and a transferred thickness of gallium and …

US8729559B2 - Method of making bulk InGaN substrates and devices thereon - Google
Patents US8729559B2 - Method of making bulk InGaN substrates and devices thereon …

An improved high pressure apparatus and methods for processing supercritical fluids is
described. The apparatus includes a capsule, a heater, and at least one ceramic ring …

A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar
large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a …