Core/shell nanoparticles: classes, properties, synthesis mechanisms, characterization, and applications
R Ghosh Chaudhuri, S Paria - Chemical reviews, 2012 - ACS Publications
Nanomaterials have, by definition, one or more dimension in the nanometer scale (≤ 100
nm) range and subsequently show novel properties from their bulk materials. The synthesis …
nm) range and subsequently show novel properties from their bulk materials. The synthesis …
Photonics and optoelectronics of two-dimensional materials beyond graphene
Apart from conventional materials, the study of two-dimensional (2D) materials has emerged
as a significant field of study for a variety of applications. Graphene-like 2D materials are …
as a significant field of study for a variety of applications. Graphene-like 2D materials are …
Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method
HM Pathan, CD Lokhande - Bulletin of Materials Science, 2004 - Springer
During last three decades, successive ionic layer adsorption and reaction (SILAR) method,
has emerged as one of the solution methods to deposit a variety of compound materials in …
has emerged as one of the solution methods to deposit a variety of compound materials in …
SILAR deposition of metal oxide nanostructured films
Methods for the fabrication of thin films with well controlled structure and properties are of
great importance for the development of functional devices for a large range of applications …
great importance for the development of functional devices for a large range of applications …
Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3
Atomically smooth, single crystalline Bi 2 Se 3 thin films were prepared on Si (111) by
molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x …
molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x …
Deposition of ceramic thin films at low temperatures from aqueous solutions
TP Niesen, MR De Guire - Journal of Electroceramics, 2001 - Springer
Many techniques for the synthesis of ceramic thin films from aqueous solutions at low
temperatures (25–100° C) have been reported. This paper reviews non-electrochemical …
temperatures (25–100° C) have been reported. This paper reviews non-electrochemical …
Epitaxial growth of topological insulator Bi2Se3 film on Si (111) with atomically sharp interface
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with
molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial …
molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial …
Enhanced electrochemical performance of mixed metal oxide (Bi2O3/ZnO) loaded multiwalled carbon nanotube for high-performance asymmetric supercapacitors
Abstract Bismuth oxide/Zinc oxide (Bi 2 O 3/ZnO-BZ) and Bismuth Oxide/Zinc Oxide loaded
Multi-Walled Carbon Nanotube (Bi 2 O 3/ZnO@ MWCNT-BZM) nanocomposites (NCs) were …
Multi-Walled Carbon Nanotube (Bi 2 O 3/ZnO@ MWCNT-BZM) nanocomposites (NCs) were …
Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method
SD Sartale, CD Lokhande - Materials Chemistry and Physics, 2001 - Elsevier
Semiconducting nickel sulphide (NiS) thin films were deposited onto glass, fluorine doped
tin oxide (FTO) coated glass and single crystal Si (111) wafer substrates using a new …
tin oxide (FTO) coated glass and single crystal Si (111) wafer substrates using a new …
Deposition of bismuth chalcogenide thin films using novel single-source precursors by metal-organic chemical vapor deposition
J Waters, D Crouch, J Raftery, P O'Brien - Chemistry of materials, 2004 - ACS Publications
The metal-organic compounds, Bi [(EPR2) 2N] 3 (E= S, Se; R= Ph, i Pr), have been
synthesized and used as single-source precursors for the deposition of bismuth …
synthesized and used as single-source precursors for the deposition of bismuth …