Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of
applications which were previously dominated by silicon-based IGBTs. From the perspective …

Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

A multiple stage gate driver for SiC MOSFETs based on a switched resistor topology is
introduced and a hardware realization is presented. The measurement setup is shown in …

Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are
required to be connected in series to meet the high-voltage requirement since the blocking …

Power devices in series are low-voltage power devices used in medium-and high-voltage
applications in a more direct program. However, when power devices in series are used …

With the advent of wide-bandgap (WBG) semiconductor devices, silicon-carbide (SiC)-
based MOSFETs for high voltage and current serve as a viable replacement for conventional …

Solid state transformers (SSTs) are evolved as an emerging technology which offer several
key features in integrating different grids, storage devices, and renewable energy sources …

In this paper, the switching and short-circuit performance of 650 V (BV= 850V) 4H-SiC
planar-gate MOSFETs with a gate oxide thickness of 27 nm are reported for the first time …

DC-DC converter battery charger application commonly applied a high-frequency switching
method. The high-frequency technique aims for a smaller size transformer size and weight …