This article focuses on failure modes and lifetime testing of IGBT modules being one of the
most vulnerable components in power electronic converters. IGBT modules have already …

The global promotion of electric vehicles (EVs) through various incentives has led to a
significant increase in their sales. However, the prolonged charging duration remains a …

Bond wire degradation is one of the most common failure modes for wire-welded packaging
insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond wire …

The online junction temperature monitoring of power devices is a viable technique to ensure
the reliable operation of mission-critical power electronic converters. This article provides a …

Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

The rapid development of power electronic devices has made them have higher power
density, which puts forward higher requirements for cooling technology. The contribution of …

This paper proposes a novel health-sensitive parameter, called the gate-emitter pre-
threshold voltage VGE (pre-th), for detecting IGBT chip failures in multichip IGBT power …

Recent growth of power semiconductor device market has been driven largely by the
growing demand for an efficient way to convert and distribute energy in the field of …

Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for
converter's healthy management and condition monitoring. However, most conventional …

Condition monitoring (CM) of power semiconductor devices enhances converter reliability
and customer service. Many studies have investigated the semiconductor devices failure …