From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

A magnetoresistive random-access memory (MRAM) device is disclosed. The device
described herein has a spin current injection capping layer between the free layer of a …

(57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is disclosed.
The device described herein has a thermal stability enhancement layer over the free layer of …

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …

Described embodiments can be used in semiconductor manufacturing and employ materials
with high and low polish rates to help determine a precise polish end point that is consistent …

An advantageous write verify operation for bipolar memory devices is disclosed. The verify
operation is performed under the same bias conditions as the write operation. Thus, the …

A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a
structure is disclosed. The pSAF structure can be a first high perpendicular Magnetic …

A magnetoresistive memory architecture in one aspect includes a plurality of bit lines each
coupled to two or more respective columns of magnetoresistive memory cells, and a plurality …

A memory pipeline for performing a write operation in a memory device is disclosed. The
memory pipeline comprises an input register operable to receive a first data word and an …