Oxide semiconductor thin‐film transistors: a review of recent advances
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …
applications. The key components are wide bandgap semiconductors, where oxides of …
Transparent perovskite barium stannate with high electron mobility and thermal stability
WJ Lee, HJ Kim, J Kang, DH Jang… - Annual Review of …, 2017 - annualreviews.org
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have
become necessary materials for a variety of applications in the information and energy …
become necessary materials for a variety of applications in the information and energy …
[图书][B] Transparent oxide electronics: from materials to devices
Transparent electronics is emerging as one of the most promising technologies for the next
generation of electronic products, away from the traditional silicon technology. It is essential …
generation of electronic products, away from the traditional silicon technology. It is essential …
Low‐temperature, nontoxic water‐induced metal‐oxide thin films and their application in thin‐film transistors
Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …
High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
E Fortunato, N Correia, P Barquinha… - IEEE Electron …, 2008 - ieeexplore.ieee.org
In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as
the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors …
the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors …
A review on Cu2O and CuI-based p-type semiconducting transparent oxide materials: promising candidates for new generation oxide based electronics
CuI-based p-type semiconducting and transparent oxide materials have recently gained
renewed interest for potential applications in energy-related devices. As a counter-part of n …
renewed interest for potential applications in energy-related devices. As a counter-part of n …
Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping
The effect of doping with three different group IV metal cations, specifically Ti4+, Zr4+, and
Hf4+, on the stability of amorphous indium–zinc-oxide (InZnO) thin-film transistors (TFTs) …
Hf4+, on the stability of amorphous indium–zinc-oxide (InZnO) thin-film transistors (TFTs) …
High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
In this study, we report high-performance amorphous In 2 O 3/InZnO bilayer metal-oxide
(BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrO x …
(BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrO x …
Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
High-performance thin-film transistors (TFTs) are the fundamental building blocks in
realizing the potential applications of the next-generation displays. Atomically controlled …
realizing the potential applications of the next-generation displays. Atomically controlled …
Control and characterization of the structural, electrical, and optical properties of amorphous zinc− indium− tin oxide thin films
DB Buchholz, J Liu, TJ Marks, M Zhang… - … applied materials & …, 2009 - ACS Publications
Zinc− indium− tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of
the indium in the In2O3 structure is replaced by substitution with zinc and tin in equal molar …
the indium in the In2O3 structure is replaced by substitution with zinc and tin in equal molar …