The existence and properties of localised electronic states are described in binary (two
layers per period) and polytype (multiple layers per period) semiconductor superlattices …

We theoretically investigate the binding energy and electron-hole (eh) overlap of excitonic
states confined at the interface between two-dimensional materials with type-II band …

Atomic intermixing during the growth of self-assembled InAs quantum dots (QDs) in InP
(001) by chemical beam epitaxy (CBE) can result in the formation of graded interfaces or …

We investigate theoretically the electronic structure of strained ultrathin InAs/InP (001)
quantum wells (QWs), using the semiempirical sp 3 d 5 s* nearest-neighbors tight-binding …

We present a detailed theoretical, numerical and photoluminescence (PL) study of the
electronic structure and optical properties of short-period AlAs/GaAs (001) superlattices …

By means of Raman scattering, photoluminescence, and x-ray diffraction experiments, we
have studied a series of ultrathin In As∕ In P single quantum wells grown with nominal well …

We have studied GaAs quantum wells (QWs) embedded in (AlAs) 4/(GaAs) 8 superlattices
(SLs) by means of surface photovoltage (SPV) spectroscopy, taking advantage of its high …

The SPV method is a powerful non-destructive and contactless characterization technique,
which has been used to study the electronic properties of a wide range of semiconductor …

A detailed optical study of GaAs quantum wells embedded in AlAs/GaAs superlattices is
presented. Photoluminescence (PL) measurements are carried out on a number of samples …

The modification of the electronic states and optical properties of quantum nanostructures by
means of purposely induced interface grading has attracted a growing interest during the …