The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs
B Lu, M Cui, W Liu - … International Conference on IC Design and …, 2019 - ieeexplore.ieee.org
The threshold voltage instability in AlGaN/GaN MIS-HEMTs is due to dielectric induced
traps. In this paper, DC IV and fast transient IV measurements were used to characterize the …
traps. In this paper, DC IV and fast transient IV measurements were used to characterize the …
An Active Inductor and Tunable Bandpass Filter in GaN
TB Herbert - 2018 - repository.library.carleton.ca
This thesis presents the design and implementation of an active inductor using gallium
nitride technology. This design is largely motivated by the lack of high quality varactors in …
nitride technology. This design is largely motivated by the lack of high quality varactors in …