Simulation-based analysis of ultra thin-body double gate ferroelectric TFET for an enhanced electric performance

G Gopal, T Varma - Silicon, 2022 - Springer
The ultra thin body double gate FE layer TFET (UTB-DG-FE-TFET) is proposed and
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …

Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors

RM Ko, SJ Wang, SJ Huang, CH Wu, WH Chen… - AIP Advances, 2023 - pubs.aip.org
This paper proposes a solution to mitigate the trade-off between dark and photocurrents in
the indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as …

Zero waste and biodegradable zinc oxide thin-film transistors for uv sensors and logic circuits

GL Nogueira, D Kumar, S Zhang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Bioderived and biodegradable electronics have the capability to reduce significantly waste
electrical and electronics equipment (WEEE) and can also be applied to other sectors …

Circumferential growth of zinc oxide nanostructure anchored over carbon fabric and its photocatalytic performance towards p-nitrophenol

JA Allen, D Murugesan, C Viswanathan - Superlattices and Microstructures, 2019 - Elsevier
In present study, zinc oxide (ZnO) nanostructure anchored on carbon fabric (CF) was
prepared using a combinational techniques of RF magnetron sputtering and hydrothermal …

ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device

DH Vieira, GL Nogueira, RM Morais… - Sensors and Actuators A …, 2022 - Elsevier
Transistors based in solution-processable semiconducting metal oxides stands out for
disposable, printed and wearable electronics. Here we report a transparent and printed ZnO …

Melting point of Sn as the optimal growth temperature in realizing the favored transparent conducting properties of In2O3: Sn films

L Karmakar, D Das - Journal of Alloys and Compounds, 2018 - Elsevier
At substrate temperature (TS) close to melting point of Sn (T Sn) rapid incorporation of
metallic dopants in significant amount introduces sharp rise in mobility (μ) and concentration …

Effects of thermal annealing on the characteristics of high frequency fbar devices

YC Chang, YC Chen, BR Li, WC Shih, JM Lin… - Coatings, 2021 - mdpi.com
In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiN x/Si
substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiN x/Si as …

Fabrication and RF characterization of zinc oxide based film bulk acoustic resonator

R Patel, D Bansal, VK Agrawal, K Rangra… - Superlattices and …, 2018 - Elsevier
This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to
improve the performance characteristics for RF filter and sensing application. Zinc oxide as a …

Electrical characterization of thin-film transistors based on solution-processed metal oxides

JP Braga, GR De Lima, G Gozzi… - Design, Simulation and …, 2018 - books.google.com
This chapter provides a brief introduction to thin-film transistors (TFTs) based on transparent
semiconducting metal oxides (SMOs) with a focus on solution-processed devices. The …

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

RM Ko, WT Chen, HC Cheng, CH Wu… - Japanese Journal of …, 2022 - iopscience.iop.org
Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs)
with a stacked dual-channel layer (DCL) structure with different carrier concentration and …